Wet and dry etching technologies are used in the semiconductor industry to transfer a specific pattern from a mask layer to the underlying surface. Wet chemical etching is performed in a liquid chemical mixture where the goal is to produce reactive products that will be dissolved in a pattern. Dry etching on the other hand deals with plasma gases reacting physically and chemically with the surface. In many applications, mainly in microelectronics, dry etching has started to replace wet etching. Various gases are used in dry etching technology, with the choice of gas depending on the materials to be etched. Hexafluoro-1,3-butadiene (C4F6), for example, is preferred for etching dielectric materials such as silicon oxide.
Years of research have shown that C4F6 (H-2316) presents several advantages for dry etching of oxide-based materials:
- It has a higher etch rate and selectivity than octafluorocyclobutane (c-C4F8 – H318), another extensively used etchant for silicon oxide. Unlike C4F8 (H318), with C4F6 (H2316), only the dielectric substrate is etched.
- The etched structure has a higher aspect ratio, leading to narrower trenches compared to c-C4F8.
- VOC emissions are reduced: C4F6 (H2316) has low global warming potential because it has a much shorter lifetime in the atmosphere.
Today, C4F6 (H2316) has become a preferred dry etchant gas for the newer generation of etchers, along with c-C4F8 (H318) and c-C5F8 (H1418). However, the choice between these gases depends in large part on the performance of the commercial reactor.
Electronic Fluorocarbons provides C4F6 (H2316) at high purity levels: 99.9% and 99.99%. We ship hexafluoro-1,3-butadiene as a pure liquefied gas in three cylinder sizes for the semiconductor industries to meet all of your customer’s needs. For additional information or to start your order call 1-888-924-3371 or email us at email@example.com.